Dr. Yang has over a decade of successful investment experience on Wall Street. He served as Managing Director at HST Holdings from 2011 to 2013 and was a partner at Quasar Fund from 2003 to 2011, having also worked as a technology investment analyst at Lipper Fund. During his time on Wall Street, he applied his expertise in semiconductors, integrated circuit design, optical instruments, RF, and wireless communications to develop a unique technology investment methodology, successfully investing in dozens of outstanding companies at industry inflection points, yielding substantial returns.
From 1996 to 2000, Dr. Yang conducted research at the Solid State Electronics Laboratory at the University of Illinois, founded by Dr. John Bardeen, a two-time Nobel Prize winner in Physics and the inventor of the transistor. He studied under Professor Nick Holonyak Jr., the inventor of LEDs and semiconductor lasers, and earned his Ph.D. in just over two years. He made notable contributions in the field of semiconductor physics and devices, with research areas including MOCVD growth of III-V compound semiconductor materials, RF power amplifier components, and ultra high-speed high power HBT design and manufacturing. Dr. Yang has also reviewed for several top academic journals and collaborated with various technology companies on projects, providing technical consulting for investment funds. During his tenure at the university, he led a team that successfully bid for and completed multiple government and industrial projects.
2013 年至 2015 年，杨博士在联合国南南合作办担任首席经济与投资专家，主要负责南南合作中的战略投资、PPP 项目和可持续发展规划，为多个发展中国家的部长和政府首脑直接提供投资与战略发展的咨询。杨博士倡导的以投资代替援助与南南国家的科技转让机制在联合国得到广泛认可，被列入联合国千年发展计划的结果文件。时任联合国最不发达国家集团（LDC）主席特别致信感谢杨博士，表彰其对最不发达国家集团可持续发展的杰出贡献。
杨博士拥有十余年在美国华尔街的成功投资经验；于 2011 年至 2013 年在HST Holdings 担任董事总经理，2003 年至 2011 年在 Quasar 基金担任合伙人，并曾在 Lipper 基金担任科技投资分析师。在华尔街期间，他运用其在半导体、集成电路设计、光学仪器、射频和无线通讯等领域的专业知识和科学的方法论，总结出独特的科技投资方法，在行业爆发的拐点，成功投资数十家优秀企业，获得丰厚回报。
1996 年至 2000 年，杨博士工作于迄今唯一两次诺贝尔物理学奖获得者，三极管的发明者巴丁(Bardeen)博士所创立的伊利诺伊大学固体电子实验室，师从美国国家科学院与美国国家工程院两院院士，LED 与半导体激光器的发明者 Holonyak 教授，仅用两年多时间获得电子工程博士学位，并留校进行科研和教学。他在半导体物理与器件领域做出了杰出贡献，研究领域包括MOCVD 生长 III-V 族化合物半导体材料、RF 功放元器件、超高速大功放 HBT 设计和制造等。杨博士还为多个顶级学术刊物审稿，并与多家科技公司进行项目合作，为投资基金提供技术咨询。在留校期间，他带领团队成功竞标并完成了多个数百万美金的政府和工业项目。